Last edited by Nikus
Thursday, May 14, 2020 | History

1 edition of Radio Frequency IC Design with Nanoscale DG-MOSFETs found in the catalog.

Radio Frequency IC Design with Nanoscale DG-MOSFETs

by Soumyasanta Laha

  • 54 Want to read
  • 5 Currently reading

Published by INTECH Open Access Publisher .
Written in English


Edition Notes

En.

ContributionsSavas Kaya, author
The Physical Object
Pagination1 online resource
ID Numbers
Open LibraryOL27016492M
ISBN 109535109308
ISBN 109789535109303
OCLC/WorldCa884239191

are the radio frequency (RF) input, the local oscillator (LO) input, and the intermediate frequency (IF) output. Figure The Mixing Process A mixer takes an RF input signal at a frequency fRF, mixes it with a LO signal at a frequency fLO, and produces an IF output signal that consists of the sum and difference frequencies, fRF ± fLO.   A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, .

On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective - Ebook written by Albert Z.H. Wang. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective. 5 Low-leakage techniques for nanoscale CMOS circuits + Show details-Hide details p. – (31) The previous few chapters focused on the variability issues of the nanoscale integrated circuits (ICs) for diverse applications including analog, radio frequency (RF), digital and memory ICs.

This "Cited by" count includes citations to the following articles in Scholar. Radio Frequency IC Design with Nanoscale DG-MOSFETs. S Laha, S Kaya. Analog Circuits, 19, 2: Stability criteria of LC oscillators in nanoscale DG-MOSFETs. S Laha, S Kaya. IEEE International Semiconductor Device Research Symposium (ISDRS), , 2. The design of analog and radio-frequency (RF) circuits in CMOS technology has become increasingly more difficult as device modeling faces new challenges in the deep sub micrometer regime and emerging circuit applications. Double gate MOSFETs show greater promise in this regard with improved short channel effects, high gate control and reduced leakage.


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Radio Frequency IC Design with Nanoscale DG-MOSFETs by Soumyasanta Laha Download PDF EPUB FB2

Radio Frequency IC Design with Nanoscale DG-MOSFETs 5 The transmitter (Fig. 3) consists of an oscillator, modulator, power amplifier and finally. PDF | On Jan 9,Soumyasanta Laha and others published Radio Frequency IC Design with Nanoscale DG-MOSFETs | Find, read and cite all the research you need on ResearchGate.

Radio Frequency IC Design with Nanoscale DG-MOSFETs 5 / The charge modeling which is patterned after that is physically linked to the channel-current modeling.

All terminal charges and their derivatives are continuous for all bias conditions, as are all currents and their derivatives.

Temperature dependence for the intrinsic device. Understand the fundamentals of radio frequency measurement of nanoscale devices with this practical, cross-disciplinary guide. Featuring numerous examples linking theoretical concepts with real-world applications, it is the ideal resource for researchers in both academia and industry new to the field of radio frequency : T.

Mitch Wallis, Pavel Kabos. A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V Cited by:   The boom of wireless and mobile networks has led to an ever-increasing demand for high performance, low-power, and low-cost radio-frequency integrated circuit (RFIC) design.

Advances in silicon and silicon–germanium-based technologies can Author: Jie Li. However, a trade-off exists between frequency response characteristic (cut-off frequency, f t) and intrinsic gain performance (g m r out) in continuously scaled MOSFET devices; f t increases due to the short carrier transportation time in the channel, but g m r out decreases due to the short channel effect (SCE).

When the dimension is scaled. The reasons for writing this book are outlined in this introductory chapter.

The conventional radio has too many components, which are bulky, costly, and consume too much power. Further, the technology used tends not to be aligned with the deep nanoscale CMOS used by digital processors. Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) has emerged over the last few decades as the basic building block of almost all computing devices.

This steady growth of MOS transistors is attributed to the scaling of the underlying MOS technology which at present has reached the nanoscale (sub nm) : Soumya Pandit. Lower Frequency Analog Design and Microwave Design Versus Radio Frequency Integrated Circuit Design 2 Impedance Levels for Microwave and Low-Frequency Analog Design 2 Units for Microwave and Low-Frequency Analog Design 3 Radio Frequency Integrated Circuits Used in a Communications Transceiver 4 Overview 6 References 6.

Frequency response curves of cascode amplifiers built using DG MOSFETs for two spacer dielectric constants at L ED = 10 nm, L ES = 5 nm, R D = kΩ and V Bias = V.

Table 2. Variation of gain bandwidth of cascode amplifiers built using DG MOSFETs with varying L ED at L ES = 5 nm with spacer materials having k = and 22 using R D = Author: Debapriya Roy, Abhijit Biswas. Electromagnetics, RF & Microwaves from CRC Press. CJN06_x_MC_Temp 3/11/14 AM Page Circuits, Devices & Systems RF Circuit Design Techniques for MF-UHF Applications.

Essentials of Advanced Radio Frequency IC Design (83 ratings) Course Ratings are calculated from individual students’ ratings and a variety of other signals, like age of rating and reliability, to ensure that they reflect course quality fairly and accurately/5(82).

Purchase Radio-Frequency Digital-to-Analog Converters - 1st Edition. Print Book & E-Book. ISBN  In-depth coverage of integrated circuit design on the nanoscale level. Written by international experts in industry and academia, CMOS Nanoelectronics addresses the state of the art in integrated circuit design in the context of emerging systems.

New, exciting opportunities in body area networks, wireless communications, data networking, and optical imaging are : Mcgraw-Hill Education. This paper presents a distributed multi-phase oscillator based on left-handed LC-ring. In contrast to traditional designs that couple multiple LC-tanks through MOSFETs, it uses an LC-ring as a single high-order resonator that generates multi-phase resonant signal.

By avoiding coupling MOSFETs which deteriorate phase noise significantly, it can synthesize multiple phases while maintaining the. Practical Guide to Radio-Frequency Analysis and Design; Practical Guide to Radio-Frequency Analysis and Design.

Introduction to RF Principles and Components. What Is RF and Why Do We Use It. Learning to Live in the Frequency Domain; Radio Frequency Modulation. Ashok Srivastava is Professor of Engineering at the Division of Electrical & Computer Engineering of Louisiana State University, Baton Rouge, where his research interests lie in low-power VLSI design and testability for nanoscale transistors and integration, and nanoelectronics with focus on novel emerging devices and integrated circuit design Pages:   Long design cycles due to the inability to predict silicon realities is a well-known problem that plagues analog/RF integrated circuit product development.

As this problem worsens for nanoscale IC technologies, the high cost of design and multiple manufacturing spins causes fewer products to Pages: WATSON: Design Space Boundary Exploration and.

Model Generation for Analog and RF IC Design. Bart De Smedt and Georges G. Gielen, Fellow, IEEE. Abstract—A new method is described which gives the designer access to the design space boundaries of a.

Packed with detailed illustrations, Advanced CMOS Cell Design enables you to: Explore the latest embedded memory architectures Master the programming of logic circuits Get expert guidance on radio frequency (RF) circuit design Learn more about silicon on insulator (SOI) technologies Acquire a full range of circuit simulation tools This.interconnect-centric design methodologies that are now the major focus of nanoscale integrated circuits (ICs).

High Performance Integrated Circuit Design begins by discussing the dominant role of on-chip interconnects and provides an overview of technology scaling. The book goes on to cover.This paper describes a single-chip GHz SiGe BiCMOS radio receiver IC which includes an LNA, a transformer balun, a downconversion mixer, an IF amplifier, and a GHz VCO.

The single-ended downconversion gain is 21 dB with an input compression point of dBm. The DSB receiver noise figure is a record 12 dB for IF frequencies in the 0 to 2 GHz range.